型号:

NP83P06PDG-E1-AY

RoHS:无铅 / 符合
制造商:Renesas Electronics America描述:MOSFET P-CH -60V 83A TO-263
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NP83P06PDG-E1-AY PDF
标准包装 1
系列 -
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 83A
开态Rds(最大)@ Id, Vgs @ 25° C 8.8 毫欧 @ 41.5A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 190nC @ 10V
输入电容 (Ciss) @ Vds 10100pF @ 10V
功率 - 最大 1.8W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 TO-263
包装 标准包装
其它名称 NP83P06PDG-E1-AYDKR
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